Experimental influence of some growth parameters upon the shape of the melt interfaces and the radial phosphorus distribution during float-zone growth of silicon single crystals
- 1 December 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 36 (2) , 215-231
- https://doi.org/10.1016/0022-0248(76)90281-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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