A rigorous boundary value solution for the lateral modes of stripe geometry injection lasers
- 1 July 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 14 (7) , 507-513
- https://doi.org/10.1109/jqe.1978.1069828
Abstract
A new mathematical model useful for analyzing lateral modes of stripe geometry lasers is presented. The oxide stripe laser is modeled as a three-layer waveguide in which the dielectric constant of the active layer varies only along the lateral direction; the dielectric constant of the surrounding passive layers is assumed to be position independent. The solution technique affords a rigorous matching of the fields of the active layer with those of the surrounding passive layers. To illustrate the model, the modes of a waveguide with parabolic dielectric variation along the lateral direction are investigated. The fields are written as a linear combination of Hermite-Gaussian (H-G) functions; heretofore, fields have been described with a single H-G function. Fundamental mode spread (spot size at halfpower) is calculated and related to the gain distribution. (Previous estimates of the lateral field spread of the fundamental mode using a single H-G function not rigorously matched at the boundaries can yield spot sizes as much as 30 percent different from results calculated from linear combinations of H-G functions.) In addition, the peak gain fields are determined at threshold for various waveguide geometries.Keywords
This publication has 12 references indexed in Scilit:
- Experimental and theoretical study of the spatial variation of junction voltage and current distribution in narrow stripe injection lasersJournal of Applied Physics, 1977
- Nonlinearity in power-output–current characteristics of stripe-geometry injection lasersJournal of Applied Physics, 1977
- Waveguiding in a stripe-geometry junction laserIEEE Journal of Quantum Electronics, 1977
- Modal characteristics of optical stripline waveguidesJournal of Applied Physics, 1976
- Striped GaAs lasers: Mode size and efficiencyJournal of Applied Physics, 1975
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Experimental properties of injection lasers. V. Strong polarizationJournal of Applied Physics, 1974
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972
- Dielectric Rectangular Waveguide and Directional Coupler for Integrated OpticsBell System Technical Journal, 1969