Enhancement of FLC switching properties using SiO alignment layers combined with charge-transfer complexes
- 1 December 1993
- journal article
- cell structure-defect-and-surface
- Published by Taylor & Francis in Ferroelectrics
- Vol. 149 (1) , 97-107
- https://doi.org/10.1080/00150199308217282
Abstract
We have previously reported that an overlayer of tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ), a conductive material, on the SiO layers is effective in shortening the response time of FLCDs (ferroelectric liquid crystal displays).1 In this paper, we demonstrated that FLC mixtures with larger spontaneous polarization values reveal more clearly the effect of an overlayer of TTF-TCNQ, Additionally, the b axis, which is the highest conductive direction, of the TTF-TCNQ complex was found to be aligned along the SiO pillars. The TTF-TCNQ did not form a complete film on the SiO films, but was localized in the regions between the SiO pillars. The results indicate that the TTF-TCNQ complex links the FLC to the electrode, providing a low-resistance path between the two and thus reducing the accumulated surface charge.Keywords
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