Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping
- 5 February 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (6) , 062108
- https://doi.org/10.1063/1.2457249
Abstract
Nanowirefield effect transistors have been fabricated using Cd dopedInAsnanowires synthesized using a solution-liquid-solid technique. Both n -channel and p -channel characteristics have been observed, which implies that the surfaceFermi level is not pinned in the conduction band. The observation of a p channel is attributed to the passivation of surface states by surface ligands introduced during nanowire synthesis and to the effects of heavy acceptor doping. Devices in which the surface ligands are removed by O 2 plasma treatment exhibit only n -channel conduction, which would be consistent with surfaceFermi level pinning in the conduction band.Keywords
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