Gain-frequency-current relation for Pb1-xSnxTe double heterostructure lasers
- 1 July 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (7) , 532-543
- https://doi.org/10.1109/jqe.1977.1069386
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Auger recombination and junction resistance in lead-tin tellurideJournal of Applied Physics, 1976
- Lead-tin telluride double-heterojunction laser diodes: Theory and experimentIEEE Journal of Quantum Electronics, 1975
- Narrow Gap SemiconductorsPublished by Elsevier ,1974
- Nuclear-Magnetic-Resonance Studies in PbTe and : An Experimental Determination of Band Parameters and Magnetic Hyperfine ConstantsPhysical Review B, 1973
- Scattering of Current Carriers and Transport Phenomena in Lead Chalcogenides II. ExperimentPhysica Status Solidi (b), 1971
- Mode confinement and gain in junction lasersIEEE Journal of Quantum Electronics, 1965
- Laser Conditions in SemiconductorsPhysica Status Solidi (b), 1961
- Polar SemiconductorsPublished by Elsevier ,1959
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954