Distribution of atoms in mixed III-V compounds
- 1 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 966-968
- https://doi.org/10.1063/1.340043
Abstract
In mixed III-V semiconductors, AB1−xCx, the atoms are supposed to be randomly distributed. Using resonant Raman scattering as a probe, we determined the departure from a random distribution inside small volumes of the order of V≂(50 Å)3. It has been shown that the frequency splitting of the vibrational modes in the allowed and forbidden configuration can be attributed to the deviation from the nominal composition x within the characteristic volume of the electron-phonon interaction.This publication has 8 references indexed in Scilit:
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