Dramatically enhanced performance of recessed SiGe source-drain pmos by in-situ etch and regrowth technique (InSERT)

27 July 2005

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 24-25
https://doi.org/10.1109/.2005.1469197

Abstract

A novel mass-production-worthy in-situ etch and regrowth technique (InSERT) for recessed SiGe source-drain (SD) PMOS is introduced. The unique source drain extension (SDE) recess results in high drive current (ion) gains of 35 and 38% for shallow recess depths of 30 and 40nm, respectively, while keeping Vth and off leakage equal to those of control Si. InSERT provides three advantages that are higher ion, higher throughput, and no need for implant retuning when compared to the conventional ex-situ dry etch and regrowth technique which exhibits an ion current gain of 23%. Author(s) Tetsuji Ueno Semicond. Bus., Samsung Electron. Co. Ltd., Yongin, South Korea Hwa Sung Rhee ; Seung Hwan Lee ; Ho Lee ; Dong suk Shin ; Yun-Seung Jin ; Shigenobu Maeda ; Nae-In Lee

Keywords

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