Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV

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Abstract
Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV and temperature range of 25–800 °C has been studied. The work was carried out using mass‐separated C+ and CH+3 ions under ultrahigh vacuum. The films were characterized with x‐ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post‐deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800 °C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.