Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 802-805
- https://doi.org/10.1016/0022-0248(92)90860-l
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Line shape of time-resolved four-wave mixingPhysical Review A, 1990
- Mesoscopic enhancement of third-order-optical susceptibility due to excitons in semiconductor microcrystallitesSolid State Communications, 1990
- Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layersPhysical Review B, 1988
- Rapid radiative decay and enhanced optical nonlinearity of excitons in a quantum wellPhysical Review B, 1988
- Excitonic molecules in ZnSe quantum wellsPhysical Review B, 1988
- Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin filmsApplied Physics Letters, 1988
- Optical nonlinearities in the exciton resonant region studied by polarization spectroscopyJournal of Luminescence, 1987
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Excitonic Polariton Dispersion in ZnSe Determined by the Resonant Raman Scattering under Two-Photon Excitation of Excitonic MoleculesJournal of the Physics Society Japan, 1981