Lithium-related point defects in CdTe
- 20 October 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (29) , 5209-5218
- https://doi.org/10.1088/0022-3719/17/29/020
Abstract
Infrared absorption studies are reported for CdTe containing simultaneously a group IIIA impurity (Al, Ga or In) added during crystal growth and lithium (6Li and 7Li isotopes) introduced by diffusion. Absorption bands observed in the spectral region 250 to 330 cm-1 are explained in terms of localised vibrational modes of two kinds of defects: (i) isolated Li occurring as an interstitial species, and (ii) MCd-VCd-Lii defect complexes, where MCd denotes Al, Ga or In on a Cd site, VCd denotes a cadmium vacancy and Lii denotes lithium in an interstitial position.Keywords
This publication has 16 references indexed in Scilit:
- Localised vibrational modes and defects of Li-doped CdTe and ZnSeJournal of Physics C: Solid State Physics, 1982
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- Infrared absorption of Al-Li defect pairs in ZnSe and CdTeJournal of Physics C: Solid State Physics, 1981
- Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and InPhysica Status Solidi (b), 1981
- Electrical, SEM, and TEM studies on ZnTe. II. Impurity segregation during long annealingPhysica Status Solidi (a), 1979
- SEM and TEM: Diffusion of lithium in ZnTePhysica Status Solidi (a), 1979
- Point defects, localized vibrational modes, and free-carrier absorption of Al-doped CdTeJournal of Applied Physics, 1976
- Edward Uhler Condon, 1902-1974Reviews of Modern Physics, 1975
- Infrared Absorption Spectrum of CdTeThe Journal of Chemical Physics, 1967
- Localized Vibrational Modes of Lithium in Lithium-Diffused p-Type GaAsJournal of Applied Physics, 1967