A review is presented of deposition processes for forming dielectric passivation layers on silicon semiconductor devices, with emphasis on recent advances in this field. Materials of prime interest are thin‐film dielectrics used as secondary passivants deposited by several types of chemical vapor deposition (CVD) processes. The fundamental principles, deposition parameters, advantages, applicability, and limitations of the various types of CVD for dielectric passivation films are described and compared. The CVD processes discussed include low‐ and high‐temperature CVD at normal pressure, and the relatively new technologies about to emerge for large‐scale applications−low‐pressure CVD at low and high temperatures, and plasma‐enhanced CVD.