MeV Implantation In Semiconductors
- 9 April 1985
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
Abstract
The residual damage distributions created by MeV dopant implantation in semiconductors show that in-situ annealing is important for defect formation. Device-quality silicon can be obtained at the top few microns of the silicon substrate after a post-implant annealing cycle. A family of majority-carrier and minority-carrier devices have been fabricated by incorporating a MeV implantation step with conventional integrated-circuit processing.Keywords
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