Amorphous oxide channel TFTs
- 9 April 2007
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 516 (7) , 1516-1522
- https://doi.org/10.1016/j.tsf.2007.03.161
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Transparent ring oscillator based on indium gallium oxide thin-film transistorsSolid-State Electronics, 2006
- High-performance flexible zinc tin oxide field-effect transistorsApplied Physics Letters, 2005
- Polycrystalline intrinsic zinc oxide to be used in transparent electronic devicesThin Solid Films, 2005
- Recent advances in ZnO transparent thin film transistorsThin Solid Films, 2005
- Tin oxide transparent thin-film transistorsJournal of Physics D: Applied Physics, 2004
- High Mobility Thin Film Transistors with Transparent ZnO ChannelsJapanese Journal of Applied Physics, 2003
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003
- Thin Film Transistor of ZnO Fabricated by Chemical Solution DepositionJapanese Journal of Applied Physics, 2001
- Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000