Laser recrystallised SOI with periodical seeding filled by selective epitaxial growth

7 May 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (10) , 493-494
https://doi.org/10.1049/el:19870358

Abstract

A periodic seeding technique for obtaining thin silicon films on an insulator (SOI) by laser recrystallisation is described. Two types of seed structure as well as their orientations relative to the scan direction are discussed. Geometrical parameters are optimised to obtain 35μm-wide defect-free SOI stripes across 4in (101-6mm) silicon wafers.

Keywords

SEMICONDUCTOR INSULATOR BOUNDARY
PERIODIC SEEDING TECHNIQUE
SELECTIVE EPITAXIAL GROWTH
SOI STRIPES
VPE
LASER RECRYSTALLISATION
SI-SIO2
SCAN DIRECTION
LASER ZMR
SEED STRUCTURE

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