Silicon bipolar 3 V power amplifier for GSM900/GSM1800 handsets
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A hybrid dual band Power Amplifier Module (PAM) for GSM900/GSM1800 mobile phones is described. The PAM utilizes Nortel's double-poly self-aligned silicon NPN transistors and HP's RF MultiPak packaging technology. The PAM operates directly from the mobile phone battery over the 2.7 V to 4.5 V range Author(s) Parkhurst, R. Wireless Semicond. Div., Hewlett-Packard Co., Newark, CA, USA Weber, D. ; Jansen, B. ; Fang, W. ; Hendin, N. ; Kolk, J. ; Repeta, M.Keywords
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