Spin-Disorder Scattering and Magnetoresistance of Magnetic Semiconductors
- 10 April 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 168 (2) , 531-538
- https://doi.org/10.1103/physrev.168.531
Abstract
The consequences of a simple type of exchange interaction between free charge carriers in a broad energy band and localized magnetic moments are discussed. The interaction causes a splitting of the energy bands into bands for the two spin directions. It also leads to spin-disorder scattering of the charge carriers. The temperature dependence of the mobility is calculated for ferromagnetic and antiferromagnetic semiconductors. Expressions are given for the magnetoresistance of ferromagnetic semiconductors.Keywords
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