Chemically enhanced ion etching on refractory metal silicides

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Abstract
Mechanisms of chemically enhanced ion etching on TiSi2 and MoSi2 were studied using high-resolution (250 ns) direct time-of-flight (TOF) spectroscopy and steady-state surface techniques (Auger electron spectroscopy and x-ray photoelectron spectroscopy). Argon ion pulses (4 μs, 0.2 mA/cm2) were used in combination with a high-pressure chlorine gas doser (1×10−5 Torr) to study ion etchant product distributions. Ion product TOF distributions were interpreted in terms of the collisional cascade model with corrections for ionization probability. Surface chemical and compositional changes were measured after etching the silicide surfaces. Differences in TOF distributions of the same species from different substrates (e.g., Si from Si, TiSi2 and MoSi2) are discussed on the basis of these chemical and compositional changes. Etching mechanisms for the silicides are discussed by comparison to the etching of the elemental surfaces.

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