EXAFS of amorphous GaAs: evidence for inequivalent environments of Ga and As
- 28 October 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (20) , L829-L832
- https://doi.org/10.1088/0022-3719/11/20/002
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Synchrotron-like intensities with a rotating anode and a focusing dispersing crystalJournal of Physics E: Scientific Instruments, 1978
- EXAFS: a new parameterization of phase shiftsJournal of the American Chemical Society, 1977
- EXAFS: approximation, parameterization, and chemical transferability of amplitude functionsJournal of the American Chemical Society, 1977
- Transferability of Phase Shifts in Extended X-Ray Absorption Fine StructurePhysical Review Letters, 1976
- Extended x-ray-absorption fine-structure technique. II. Experimental practice and selected resultsPhysical Review B, 1975
- Densities of valence states of amorphous and crystalline III-V and II-VI semiconductorsPhysical Review B, 1974
- Similarities in the Structures of Amorphous InAs and GePhysical Review Letters, 1973
- The structure of tetrahedrally coordinated amorphous semiconductorsJournal of Non-Crystalline Solids, 1973
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971