Metallic channels formed by high surface fields on GaAs planar devices

18 November 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (23) , 692-693
https://doi.org/10.1049/el:19710473

Abstract

Experimental finding are presented which show, among other results, that material migration also occurs along semi-insulating surfaces for GaAs planar devices.

Keywords

METALLIC CHANNELS
GUNN DEVICES
CONTACTS
RESISTANCE
GAAS PLANAR DEVICES
HIGH SURFACE FIELDS
MATERIAL MIGRATION

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