Polarization effect in light emitting diodes with ordered GaInP active layers
- 22 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (17) , 2383-2385
- https://doi.org/10.1063/1.116141
Abstract
We report on polarization effects in surface emitting light emitting diodes based on p‐i‐n AlGaInP/GaInP double heterostructuresgrown by metal organic vapor phase epitaxy. Devices with an ordered GaInP active layer show polarized light output with a ratio of 4:3 for polarization along the [011] and [011̄] crystal direction, respectively. This polarization is nearly independent of diode current and mesa geometry, but is not observed if disordered GaInP active layers are used. The effect is considered to be an important means for polarization control in vertical cavity surface emitting lasers.Keywords
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