Band-structure analysis of the conduction-band mass anisotropy in 6Hand 4HSiC
- 15 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (4) , R2249-R2252
- https://doi.org/10.1103/physrevb.52.r2249
Abstract
The band structures of 6H SiC and 4H SiC calculated by means of the full-potential linear-muffin-tin-orbital method are used to determine the effective mass tensors for their conduction-band minima. The results are shown to be consistent with recent optically detected cyclotron resonance measurements, which find the ratio of cyclotron masses for B⊥c to B∥c to be larger (smaller) than unity for the 6H (4H) polytype. However, contrary to previous suggestions, appreciable anisotropies in the c plane are found. For 6H SiC, a strong dependency on band filling is predicted because of the occurrence of a double-well minimum along the ML axis. The calculated mass tensors for 3C and 2H are also reported.All Related Versions
This publication has 5 references indexed in Scilit:
- Linearized band structure methodsPublished by Springer Nature ,2008
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Luminescence ofSiC, and Location of Conduction-Band Minima in SiC PolytypesPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964