High Performance (Hg,Cd)Te Heterostructure Photodiode Arrays With Improved Radiation Hardening

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Abstract
LWIR photodiodes have been fabricated in (Hg,Cd)Te heterostructures grown liquid phase epitaxially from tellurium rich solutions. R°A values of up to 10 8 ohm-cm2 and quantum efficiencies in excess of 50 percent have been demonstrated at 40K for a cutoff wavelength of λco ≈ 10.0 μm. These diodes have also been found to be extremely hard to nuclear radiation with no perceivable deterioration in the device performance even upon irradiation of up to 0.85 Megarads. We believe that these R°A performance and the levels of tolerance to radiation are the highest anyone has reported in literature to date.

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