Analysis of punch-through-injection for a transit-time negative resistance diode†
- 22 January 1971
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 30 (1) , 19-32
- https://doi.org/10.1080/00207217108900279
Abstract
The non-linearity of the punch-through-injection characteristic is used for the realization of a transit-time microwave oscillator diode. By modulating the height of a potential barrier situated at one end of the drift region of the device, a sharp injection of charge is effected periodically, but without the multiplication noise inherent in the operation of the avalanche transit-time diode. The injected charge, including the effect of mobile space-charge, and the resulting external circuit current, are analysed numerically, using a simplified three-layer silicon PNP structure. It is shown that it is possible to achieve efficiencies of the order of 10%.Keywords
This publication has 4 references indexed in Scilit:
- ‘Punch-through’ transit-time oscillatorElectronics Letters, 1968
- A proposed punch-through microwave negative-resistance diodeIEEE Transactions on Electron Devices, 1968
- A small-signal theory of avalanche noise in IMPATT diodesIEEE Transactions on Electron Devices, 1967
- Space charge limited and emitter current limited injections in space charge region of semiconductorsIEEE Transactions on Electron Devices, 1964