Implantation Doping and Hydrogen Passivation of GaN

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 1099-1104
• https://doi.org/10.4028/www.scientific.net/msf.258-263.1099

Abstract

Keywords

• CD ACCEPTORS
• GALLIUM NITRIDE (GAN)
• HYDROGEN PASSIVATION
• ION IMPLANTATION
• PAC SPECTROSCOPY