Fabrication and microscopic photoluminescence imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice
- 26 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (9) , 1294-1296
- https://doi.org/10.1063/1.117396
Abstract
We have fabricated ridge‐type InGaAs quantum wire structures on a (110) cleaved plane of AlGaAs/GaAs superlattice using selective metalorganic chemical vapor deposition growth. The lateral width of the quantum wires was about 25 nm. Spatially resolved photoluminescence (PL) of the quantum wires was observed by using microscopic photoluminescence measurement at low temperature, showing PL from the quantum wire region and its polarization dependence.Keywords
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