Interface energy spectrum of real PbTe/SnTe heterojunctions
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S364-S366
- https://doi.org/10.1088/0268-1242/8/1s/082
Abstract
The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed in both the (111) and (001) planes is calculated. It is shown that, even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface midgap states may still exist due to the strain effect on the band gaps.Keywords
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