Evaluation of Laser CVD Tungsten for Gate Electrode
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2161
- https://doi.org/10.1143/jjap.27.l2161
Abstract
The properties of tungsten (W) film deposited by ArF excimer laser CVD using WF6 and H2 gases, and the characteristics of MOS capacitors with laser CVD-W gates were studied. The intrinsic stress of W film varies from large tensile to small compressive with increasing H2/WF6 gas flow ratio. It has been found that W film is reproducibly deposited on SiO2 when the intrinsic stress of W is less than 4×109 dyne/cm2 (tensile). MOS capacitors with laser CVD-W gates show more excellent properties, particularly lower contamination of SiO2 due to mobile ions, than those with sputtered-W gates.Keywords
This publication has 5 references indexed in Scilit:
- Excimer laser initiated chemical vapor deposition of tungsten films on silicon dioxideJournal of Applied Physics, 1987
- Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal‐Oxide‐Silicon CapacitorsJournal of the Electrochemical Society, 1987
- Fabrication of Highly Reliable Tungsten Gate MOS VLSI'sJournal of the Electrochemical Society, 1986
- Internal stresses and resistivity of low-voltage sputtered tungsten filmsJournal of Applied Physics, 1973
- Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresJournal of the Electrochemical Society, 1971