Re-examination of the formation mechanism of CuPt-type natural superlattices in alloy semiconductors

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2 May 1991

journal article
Published by Elsevier in Journal of Crystal Growth

Vol. 111 (1-4) , 353-359
https://doi.org/10.1016/0022-0248(91)91000-z

Abstract

No abstract available

This publication has 23 references indexed in Scilit:

Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_0.5In_0.5P Grown on (001) GaAs Substrates
Japanese Journal of Applied Physics, 1989
Electronic structure of the (GaP $)_{1}$ /(InP $)_{1}$ (111) strained-layer superlattice
Physical Review B, 1989
Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_0.5In_0.5P Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics, 1989
Nonexistence of Long-Range Order in Ga_0.5In_0.5P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
Japanese Journal of Applied Physics, 1988
Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics, 1988
Observation of Strong Ordering in ${Ga}_{x} {In}_{1 - x} P$ alloy semiconductors
Physical Review Letters, 1988
Structure of GaAs(001) $(2 \times 4) - c (2 \times 8)$ Determined by Scanning Tunneling Microscopy
Physical Review Letters, 1988
Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase
Journal of Crystal Growth, 1988
AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
IEEE Journal of Quantum Electronics, 1987
Long-Range Order in ${Al}_{x} {Ga}_{1 - x} As$
Physical Review Letters, 1985