Modelling of Thin‐film Crystalline Silicon Parallel Multi‐junction Solar Cells
- 1 September 1995
- journal article
- Published by Wiley in Progress In Photovoltaics
- Vol. 3 (5) , 333-350
- https://doi.org/10.1002/pip.4670030507
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Decreased emitter sheet resistivity loss in high‐eficiency silicon solar cellsProgress In Photovoltaics, 1994
- A unified mobility model for device simulation—I. Model equations and concentration dependenceSolid-State Electronics, 1992
- Theoretical study of the influence of doping concentration on the performance of polycrystalline silicon solar cellsJournal of Applied Physics, 1992
- Unified apparent bandgap narrowing in n- and p-type siliconSolid-State Electronics, 1992
- Grain boundary barrier heights and recombination velocities in polysilicon under optical illuminationSolar Energy Materials, 1991
- Grain boundary barrier height in base and space charge regionsSolid-State Electronics, 1983
- On the mobility of polycrystalline semiconductorsSolid-State Electronics, 1980
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- On the mobility of holes in deformed semiconductorsPhysica Status Solidi (b), 1973
- Carrier generation-recombination in the space-charge region of an asymmetrical p-n junctionSolid-State Electronics, 1968