Defects in preamorphized single-crystal silicon
- 19 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (21) , 2214-2216
- https://doi.org/10.1063/1.103895
Abstract
Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec −0.40 eV has been found associated with the amorphous-crystalline boundary dislocation loops. In addition, a near mid-gap trap at Ev+0.54 eV, observed in p-type samples, is believed to be responsible for a spatially localized generation current of ∼2×10−6 A/cm2 associated with the dislocation loops.Keywords
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