Angle resolved photoelectron spectroscopy-the cleaved (110) surface of indium phosphide
- 20 March 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (8) , 1581-1591
- https://doi.org/10.1088/0022-3719/13/8/028
Abstract
Angle resolved photoemission studies have been carried out for the (110) cleaved surface of indium phosphide, using He I radiation (21.2 eV) as the light source. The angular dependence of the various features observed are considered in terms of emission from surface and bulk electron states. Many of the emission peaks can be understood in terms of k-conserving bulk optical transitions. In as much as emission may be attributed to surface states then the bond rotation-relaxation model of surface relaxation is to be preferred to the bond-relaxation model.Keywords
This publication has 13 references indexed in Scilit:
- An investigation of thin silver films on cleaved silicon surfacesJournal of Physics C: Solid State Physics, 1979
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Angle-resolved uv photoemission and electronic band structures of the lead chalcogenidesPhysical Review B, 1978
- (110) surface states of GaAs: Sensitivity of electronic structure to surface structurePhysical Review B, 1978
- Angle-resolved photoemission from GaAs (110) surface statesPhysics Letters A, 1978
- Theory of metal-semiconductor interfacesPhysical Review B, 1978
- Valence Band Structure of PbS from Angle-Resolved PhotoemissionPhysical Review Letters, 1977
- Angle-resolved photoemission studies of surface states on (110) GaAsJournal of Vacuum Science and Technology, 1976
- Intrinsic surface states of (110) surfaces of group IV and III-V semiconductorsPhysical Review B, 1974
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966