Ohmic contacts on n -GaAs produced by spark alloying
- 16 April 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (8) , 290-291
- https://doi.org/10.1049/el:19810203
Abstract
A new method of forming ohmic contacts on n-GaAs using electroplated Sn/Au and alloying with a high frequency spark generator is described. This process gives an average contact resistance of 3.9×10−6±0.2×10−6 Ωcm2, which is comparable to results obtained by laser irradiation and indirect electric heating. The sparking technique produces uniform alloying of the substrate surface, while avoiding high temperatures throughout the substrate.Keywords
This publication has 1 reference indexed in Scilit:
- Rectifying Semiconductor ContactsJournal of the Electrochemical Society, 1956