Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry
Open Access
- 9 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (15) , 2197-2199
- https://doi.org/10.1063/1.115101
Abstract
In situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the blue‐green spectral region. 10‐ and 20‐period layer structures of MgZnSSe/ZnSSe were grown on GaAs (100) epilayers by molecular beam epitaxy. A room‐temperature peak reflectance of 86% was obtained for the 20‐period structure at the central wavelength of 474 nm. The results show that, in general, in situ optical monitoring of growth is a viable and simple method for real‐time layer thickness control of MgZnSSe/ZnSSe quarter‐wave stacks.Keywords
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