Use of Plasma‐Deposited Si3 N 4 as an Oxidation Mask in the Fabrication of GaAs Shallow‐Homojunction Solar Cells
- 1 May 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (5) , 1211-1213
- https://doi.org/10.1149/1.2115780
Abstract
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