Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Picosecond OMVPE GaAs/SiO2photoconductive devices and applications in materials characterizationIEEE Journal of Quantum Electronics, 1987
- Picosecond Photoconductors: Physical Properties and ApplicationsPublished by Elsevier ,1984