GaAlAs semiconductor diode laser 4-ary frequency shift key modulation at 100 Mbit/s
- 3 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (1) , 12-13
- https://doi.org/10.1049/el:19850008
Abstract
4-ary FSK modulation of a semiconductor diode laser by injection current modulation has been demonstrated at a rate of 100 Mbit/s. The injection current modulator has a modular design which allows expansion to M-ary FSK with independent control of each tone frequency. The design allows considerable flexibility in the logical relationship between the source data and the selected frequency tones.Keywords
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