Silver sensitized obliquely depositedgermanium selenide films exposed to 25 keV N+ion beam exposure exhibit an increasing sensitivity with increasing deposition angle with respect to the substrate surface normal. Filmsdeposited at 75° are 20 times more sensitive than the filmsdeposited normally (0°). The film density was found to decrease with increasing deposition angle with a reduction as high as 25% for the filmsdeposited at 75°. The obliquely depositedfilms are chemically very reactive both in terms of silveradsorption in a sensitizer and their dissolution rate in a developer. Rutherford back scattering spectra of the adsorbed Ag indicate penetration of Ag through more than half the thickness of the filmdeposited at 60° and 75° indicative of deep voids in these films, a consequence of the oblique deposition. The 45° film shows a photodoping efficiency 3 times that of a 0° film. This enhanced silverdoping efficiency may be primarily responsible for the increased sensitivity of the oblique films. Using a bilevel scheme involving a GeSe2filmdeposited at 45° on a poly (vinyl formal) PVF layer submicron patterns were written on the GeSe2film with a 20 keV vector scanned, In+ion beam focussed to a spot size of 2500 Å. The developed patterns on the GeSe2 were successfully transferred to the underlying PVF by an oxygen reactive ion etch, producing 0.3 μm wide polymer patterns.