Rapid thermal processing of silicon dioxide films in metal–oxide semiconductor capacitors: High-temperature SiO2 decomposition at the SiO2–Si interfaces in inert ambient
- 1 March 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (2) , 141-144
- https://doi.org/10.1116/1.584705