Stacking fault pyramids, island growth and misfit dislocations in InxGa1−xAs/InP heterostructures grown by vapour phase epitaxy
- 15 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 9 (1-3) , 115-119
- https://doi.org/10.1016/0921-5107(91)90158-r
Abstract
No abstract availableKeywords
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