Severe gain suppression due to dynamic carrier heating in quantum well lasers
- 17 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (7) , 808-810
- https://doi.org/10.1063/1.118229
Abstract
Comparing the results of the quantum well laser diode simulator Minilase-II with modulation responses measured at the University of California, Santa Barbara, we show that electron and polar optical phonons are rapidly heated above equilibrium in conventional injection lasers. This heating essentially follows and counteracts the modulation of the carrier density, leading to degradation of the dynamic laser response even for relatively small changes in carrier temperature. With this in mind, we speculate about the use of tunneling injection to avoid the hot quantum carrier effects intrinsic to conventional injection lasers.Keywords
This publication has 7 references indexed in Scilit:
- Tunneling injection lasers: a new class of lasers with reduced hot carrier effectsIEEE Journal of Quantum Electronics, 1996
- Simulating carrier dynamics in quantum well lasersPublished by SPIE-Intl Soc Optical Eng ,1996
- Simulating spatial and spectral hole burning and the modulation response of quantum well laser diodesPublished by SPIE-Intl Soc Optical Eng ,1995
- Self-consistent calculation of the modulation response for quantum well laser diodesApplied Physics Letters, 1994
- Dual modulation of semiconductor lasersPublished by SPIE-Intl Soc Optical Eng ,1994
- Transport limits in high-speed quantum-well lasers: experiment and theoryIEEE Photonics Technology Letters, 1992
- Secondary emission studies of hot carrier relaxation in polar semiconductorsSolid-State Electronics, 1988