Linearization of silicon junction characteristics for temperature measurement
- 1 June 1977
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 10 (6) , 613-616
- https://doi.org/10.1088/0022-3735/10/6/014
Abstract
The measurement of the variation of the voltage across a silicon p-n junction through which a constant current is flowing is a simple and inexpensive method of measuring the temperature. By linearization of this voltage, direct display of the temperature may be achieved. A circuit is given for operation between -50 and +100 degrees C with an absolute accuracy of 0.1 degrees C.Keywords
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