Technique and Apparatus for Determining the Response of Scintillators and Semiconductors to Low Energy X-Ray Excitation
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (1) , 287-296
- https://doi.org/10.1109/tns.1966.4323977
Abstract
This paper describes the apparatus and techniques that are being developed at our laboratory in order to investigate the response of scintillators and semiaonductors to X-ray excitation. Examples of the signal averaging technique are shown using the highly attenuated output of a precision pulse generator as the signal source. A discussion of the intended applications of the apparatus is presented.Keywords
This publication has 12 references indexed in Scilit:
- On the information available from the rise-time of the charge pulse supplied by semiconductor particle detectorsNuclear Instruments and Methods, 1965
- On a new method for measuring the charge carriers drift mobility in high resistivity siliconPhysics Letters, 1965
- Influence of non-constant carrier mobility on the charge transport time in semiconductor detectorsNuclear Instruments and Methods, 1965
- Evaluation of New Photomultipliers for Scintillation CountingIEEE Transactions on Nuclear Science, 1965
- Internal Pulse Amplification in High Field, Silicon Radiation Detection JunctionsIEEE Transactions on Nuclear Science, 1965
- Pulse formation and transit time of charge carriers in semiconductor junction detectorsNuclear Instruments and Methods, 1964
- Response of NAI (Tl) to X-Rays and Low Energy Gamm RaysIRE Transactions on Nuclear Science, 1962
- Stujdies of the Scintillation Respnse of CsI(Tl)IRE Transactions on Nuclear Science, 1962
- Transit time of charge carriers in the semiconductor ionization chamberNuclear Instruments and Methods, 1961
- Nonlinear Response of NaI(Tl) to PhotonsReview of Scientific Instruments, 1956