Normal-state Hall-effect measurements on ${\mathrm{Y}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Pr}}_{\mathit{x}}$${\mathrm{Ba}}_2$${\mathrm{Cu}}_3$${\mathrm{O}}_{7\mathrm{-}\mathrm{\delta }}$ single crystals

The temperature dependence of the Hall effect was studied on single crystals of ${\mathrm{Y}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Pr}}_{\mathit{x}}$ ${\mathrm{Ba}}_2$ ${\mathrm{Cu}}_3$ ${\mathrm{O}}_{7\mathrm{-}\mathrm{\delta }}$ with the magnetic field perpendicular to the ab plane and the current flowing in the ab plane. The anomaly in the Hall coefficient at around 120 K found in some of the 1:2:3 compounds is not observed in Pr-doped Y-Ba-Cu-O crystals. We observed that an increase in Pr concentration reduces the mobile carrier density and its strong temperature dependence. The reduction of the total conduction carriers can be attributed to hole filling or hole localization. Our results suggest that it is more likely that hole filling is responsible for the suppression of ${\mathit{T}}_{\mathit{c}}$ in the system.