Domain switching behaviour of ferroelastic BiVO4
- 1 June 1990
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 106 (1) , 81-86
- https://doi.org/10.1080/00150199008214563
Abstract
The ferroelastic domain switching behaviour has been investigated by employing the stress-strain hysteresis curves in BiVO4 crystal grown by the Czochralski method. When a small stress is applied the domain walls which are (110)A and (110)B twin planes move and return to the initial positions as the stress is removed. This switching behaviour is found to be strongly influenced by the rate of strain, and may be explained by the restricted rotation of the VO4 tetrahedron in the distorted scheelite structure. The switching stress of 2.6 × 106 N/m2 is experimentally determined by progressively raising the strain. The value turns out to be in good agreement with 2.3 ∼ 3.6 × 106 N/m2 calculated from the elastic constants of BiVO4.Keywords
This publication has 0 references indexed in Scilit: