Transient thermal response of amplifying gate thyristors
- 15 April 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (8) , 188-189
- https://doi.org/10.1049/el:19760146
Abstract
A computer-aided investigation of the transient thermal behaviour of amplifying gate thyristors (a.g.t.s.) has been performed by taking into consideration the nonlinear properties of silicon over a wide range of temperature excursions.Keywords
This publication has 1 reference indexed in Scilit:
- A thermal model for high power devices designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974