GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate
- 1 January 2006
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 14 (18) , 8184-8188
- https://doi.org/10.1364/oe.14.008184
Abstract
A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buried-heterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 μm and a stripe width of 2 μm.Keywords
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