Carrier conduction in thin silicon nitride films
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 681-683
- https://doi.org/10.1063/1.93233
Abstract
Carrier conduction in thin chemical vapor deposition (CVD) silicon nitride films in the thickness range 467 Å⩾tN⩾88 Å is investigated. The dominant carriers flowing through the thin nitride films are holes for both polarities. The enormous increase of current with decreasing film thickness can be explained by a thickness fluctuation model. The thickness fluctuation of about 25 Å is obtained in the electrical measurement. This model is confirmed by observing the appearance of microhillocks on the surface of oxidized thin nitride films.Keywords
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