Avalanche region width in various structures of IMPATT diodes

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (8) , 1245-1248
https://doi.org/10.1109/PROC.1971.8372

Abstract

The avalanche region of one-sided and two-sided abrupt junctions has been studied. These are the structures most commonly utilized for IMPATT diodes. Numerical results are presented which show that n⁺-p Si diodes have much narrower avalanche regions, due to the unequal ionization rates in Si, than the complementary p⁺-n type. The implications of these results with respect to IMPATT diode design are discussed.

Keywords

SCHOTTKY DIODES
GALLIUM ARSENIDE
IONIZATION
ELECTRIC BREAKDOWN
ELECTRONS
EQUATIONS
RESISTS
BIPOLAR TRANSISTORS
DRIVER CIRCUITS
SCHOTTKY BARRIERS

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