Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 420-422
- https://doi.org/10.1063/1.95243
Abstract
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x‐ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F‐polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near‐surface region up to a depth in excess of 400 Å from the Si surface.Keywords
This publication has 9 references indexed in Scilit:
- Silicon Damage Caused by Hydrogen Containing PlasmasJournal of the Electrochemical Society, 1983
- Plasma-Assisted Etching in MicrofabricationAnnual Review of Materials Science, 1983
- Damage induced in Si by ion milling or reactive ion etchingJournal of Applied Physics, 1983
- RIE Contamination of Etched Silicon SurfacesJournal of the Electrochemical Society, 1982
- Structure, bonding, and reactivity of polymer surfaces studied by means of ESCACritical Reviews in Solid State and Materials Sciences, 1978
- New precision technique for measuring the concentration versus depth of hydrogen in solidsApplied Physics Letters, 1976
- A new mechanism for interstistitial migrationPhysics Letters A, 1972
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956