Non-bulk Si-O bonding at the Si-SiO 2 interface
- 18 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (17) , 1062-1063
- https://doi.org/10.1049/el:19880720
Abstract
A simple silicon dioxide bonding model is applied to a variety of films and shown to be applicable only for grown layers thicker than about 400 Å, indicating that ‘non-bulk’ bonding is present near to the silicon interface.Keywords
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